摘要: Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy
depositions, allowing for the design of low-threshold detectors. We propose
using doped semiconductor targets to search for sub-MeV dark matter scattering
or sub-eV dark matter absorption on electrons. Currently unconstrained cross
sections could be tested with a 1 g-day exposure in a doped detector with
backgrounds at the level of existing pure semiconductor detectors, but
improvements would be needed to probe the freeze-in target. We discuss the
corresponding technological requirements and lay out a possible detector
design.
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